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Secondary Ion Mass Spectrometry (SIMS)

Depth Profiling and Surface Analysis


Secondary Ion Mass Spectrometry (SIMS)

The Cameca IMS-7f magnetic sector SIMS instrument brings to PSI the capability of depth profiling with high sensitivity (ppm to ppb concentrations) that can be used to profile dopants and contamination in a range of semiconductor materials (Si, GaAs, GaN, etc.).


Typical SIMS applications include:

  • Dopant/implant characterization
  • Analysis of nitrided gate oxides
  • Contamination in Cu metallization
  • Surface metal contamination measurement
  • Atmospheric (O, C, N and H) contamination characterization

Phi Quantera Scanning X-ray microprobe

Small Spot X-ray Photoelectron Spectroscopy (XPS) using the Phi Quantera Scanning X-ray microprobe. The Quantera delivers the ability to perform XPS analysis on spots as small as 20 microns and do XPS imaging with ~ 10 micron lateral resolution.


Typical XPS applications include:

  • Unknown contamination identification on small features
  • Chemical bonding information (both surface and in-depth)
  • Chemical composition information







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